Equipment and Services

At INA Institute state of the art equipment and tools are employed to perform research and development projects financed by public authorities and by industrial contracts. This infrastructure is also used for fabrication of customer specific devices. Within usual limits the infrastructure is also available for service purposes like device and system design and simulation, realization of semi finished material or single process steps performed on preprocessed silicon wafers with 3". Special processes can be performed on glass substrates as well. At the moment the following service offers are available:


Process Technologies:

• Epitaxy of GaAs, InAs, AlAs and compounds, (up to 2" wafer)
• Focussed Ion Beam (FIB) Crossbeam equipment für deposition, nanostructuring and analytics
• NanoImprint (up to 6") with SCIL Tooling for hybride Stamps
• Deposition of low temperature gate-oxide and nitride (up to 6")
• Ion beam deposition (up to 6" wafer), several targets
• Sputtering and evaporation of metals: Ti, Pt, Au, Al, Cr, Ni, Zn, Ge
• Wafer oxidation and diffusion processes
• Rapid thermal annealing (RTA)
• UV and electron beam lithography up to 3", with several resists
• 5 RF (13.56 MHz) RIE reactors, gases: SF6, CHF3, CH4, H2, N2, O2; Ar – etching of several dielectric material and Si-, GaAs- und InP materials
• ICP RIE system, SF6, CHF3, CH4, H2, N2, O2; Ar, Cl2, BCl3, HBr
• Wet etching
• Bonding technics

Analytics:

• Scanning electron microscope
• E-beam lithography
• Scanning transmission electron microscope (FIB)
• X-ray diffractometry and reflectometry
• White light interferometer
• Ellipsometry
• Contact profilometer

Device Characterisation:

• Transmission and reflection characterisation of vertical optical filter
• L/I-, near field and far field measurement on VCSELs
• Dynamic measurements (RIN, time constant)