Cleanroom Equipment
On this page you find an overview of all machines which are available at INA. If there are questions please do not hesitate to contact us.Lithography
- Electron column: high resolution (1,3 nm) field emission
- Ion column: high resolution (4 nm), suitable for deposition and etching
Karl Süss MA6 Maskaligner
- NanoImprint with SCIL Tooling for hybride Stamps
- up to 6“-substrates, up to 7“-masks
- up to 4“-substrates, up to 7“-masks
- Resolution: standard 800 nm, optional up to 300 nm
- up to 4“-substrates, up to 5“-masks
- High resolution (20 nm and below)
- 100 x 100 mm laser interferometer table
- Positioning accuracy 2 nm in x- and y-direction
Deposition
Roth & Rau Ionsys 1000 IBD
Ion Beam Deposition
- Class 1 cleanroom section
- Multilayer systems (DBR, VCSEL etc.)
- In-situ process control
- Material: metals (e.g. Al, Zr, Cr), oxides (e.g. ITO, TiO, SiO2), nitrides (e.g. SiN)
- Process gases: Argon (Ar), Xenon (Xe), Oxigen (O2), Nitrogen (N2)
Molecular Beam Epitaxy
- Epitaxy of single crystals
- Coating thickness accuracy in the nm-range
- In-situ-control by RHEED
- Ultra high vacuum (10-8 - 10-10 mbar)
- Material: Gallium (Ga), Indium (In), Aluminium (Al), Arsenic (As), Silicon (Si), Beryllium (Be)
- Thermal or electron beam
- Material: Titanium (Ti), Nickel (Ni), Chromium (Cr), Platinum (Pt), Aluminium (Al)
- Thermal or electron beam
- Process gas: Argon (Ar)
- Material: Nickel (Ni), Titanium (Ti), Platinum (Pt), Gold (Au), Germanium (Ge), Chromium (Cr)
- Thermal
- Material: Zinc (Zn), Gold (Au)
Plasma Enhanced Chemical Vapour Deposition
- Process gases: Silan (SiH4), Hydrogen (H2), Ammonia (NH3), Nitrous oxide (N2O)
- Material: Silicon Nitride (SiN), Silicon Oxide (SiO), Silicon (Si)
Dry Etching
Reactive Ion Etching
Parallel Plate Reactor
- Process gases: Argon (Ar), Trifluoromethane (CHF3), Sulfur hexafluoride (SF6), Oxygen (O2)
- Material: Silicon Nitride (SiN), Silicon Oxide (SiO)
Reactive Ion Etching
Parallel Plate Reactor
- Process gases: Hydrogen (H2), Methan (CH4)
- Material: Indium (In), Phosphorus (P), Gallium (Ga), Arsenic (As) compound semiconductors (e.g. InP)
Inductive Coupled Plasma - Reactive Ion Etching
- ICP 1: for deep etching of silicon with flourine-donators (Bosch-process)
- ICP2: for etching of semiconductor materials (e.g. GaAs) with chlorine-donators
- Etching of photo resist and organic residues
- Process gas: Oxygen (O2)
Further Equipment
- Process gas: Carbon Dioxide (CO2)
Rapid Thermal Annealing
- Process gas: Argon (Ar)
- Temperatures up to 400°C
Analytics
- Vertical Resolution up to 0.1nm
- Objectives: 5x Michelson, 50x Mirau
- xy motordesk for stitching
- Extended vertical scan length up to 20mm
- up to 1000x Magnification
- Contrast method: bright field, dark field, differential interference contrast
- Impinging light and transmitted light
Monitoring of film thickness
Ambios Technology Oberflächenprofilometer XP-100
- 3 nm-Auflösegenauigkeit
- 0,03 - 10 mg Stylus-Aufdruckkraft
- 1,2 mm max. Messbereich in z-Richtung
- Analyse von Stufenhöhen, Schichtdicken, Rauheit, Welligkeit, Dünnschichtstress
Sloan Dektak IIA Profilometer
- 20 nm resolution
- Band width: 9 kHz-30 GHz
- Band width: 600-1700 nm