INA - Technological Electronics > Equipment: Facilities and Services

Cleanroom Equipment

On this page you find an overview of all machines which are available at INA. If there are questions please do not hesitate to contact us.

Lithography

Zeiss NVision 40 High End Cross Beam

  • Electron column: high resolution (1,3 nm) field emission
  • Ion column: high resolution (4 nm), suitable for deposition (local microdeposition) and etching

Karl Süss MA6 Maskaligner

  • NanoImprint with SCIL Tooling for hybride Stamps
  • up to 6“-substrates, up to 7“-masks
Karl Süss MA4 Maskaligner
  • up to 4“-substrates, up to 7“-masks
  • Resolution: standard 800 nm, optional up to 300 nm
EVG Al-4 Maskaligner
  • up to 4“-substrates, up to 5“-masks
Raith eLine Electron Beam Lithography
  • High resolution (20 nm and below)
  • 100 x 100 mm laser interferometer table
  • Positioning accuracy 2 nm in x- and y-direction

Deposition

Roth & Rau Ionsys 1000 IBD

Ion Beam Deposition

  • Class 1 cleanroom section
  • Multilayer systems (DBR, VCSEL etc.)
  • In-situ process control
  • Material: metals (e.g. Al, Zr, Cr), oxides (e.g. ITO, TiO, SiO2), nitrides (e.g. SiN)
  • Process gases: Argon (Ar), Xenon (Xe), Oxigen (O2), Nitrogen (N2)
Varian GEN II MOD MBE

Molecular Beam Epitaxy
  • Epitaxy of single crystals
  • Coating thickness accuracy in the nm-range
  • In-situ-control by RHEED
  • Ultra high vacuum (10-8 - 10-10 mbar)
  • Material: Gallium (Ga), Indium (In), Aluminium (Al), Arsenic (As), Silicon (Si), Beryllium (Be)
Pfeiffer PLS 500 Evaporation System
  • Thermal or electron beam
  • Material: Titanium (Ti), Nickel (Ni), Chromium (Cr), Platinum (Pt), Aluminium (Al)
Balzers BAK 600 Evaporation System
  • Thermal or electron beam
  • Process gas: Argon (Ar)
  • Material: Nickel (Ni), Titanium (Ti), Platinum (Pt), Gold (Au), Germanium (Ge), Chromium (Cr)

Phönix Evaporation System (self made)
  • Thermal
  • Material: Zinc (Zn), Gold (Au)
Oxford Plasmalab 80 PECVD

Plasma Enhanced Chemical Vapour Deposition
  • Process gases: Silan (SiH4), Hydrogen (H2), Ammonia (NH3), Nitrous oxide (N2O)
  • Material: Silicon Nitride (SiN), Silicon Oxide (SiO), Silicon (Si)

Zeiss NVision 40 High End Cross Beam

  • Electron column: high resolution (1,3 nm) field emission
  • Ion column: high resolution (4 nm), suitable for deposition (local microdeposition) and etching

Dry Etching

Castor and Pollux RIE

Reactive Ion Etching
Parallel Plate Reactor
  • Process gases: Argon (Ar), Trifluoromethane (CHF3), Sulfur hexafluoride (SF6), Oxygen (O2)
  • Material: Silicon Nitride (SiN), Silicon Oxide (SiO)
Oxford Plasmalab 80 Plus RIE

Reactive Ion Etching
Parallel Plate Reactor
  • Process gases: Hydrogen (H2), Methan (CH4)
  • Material: Indium (In), Phosphorus (P), Gallium (Ga), Arsenic (As) compound semiconductors (e.g. InP)
2 Oxford Plasmalab 100 ICP-RIE

Inductive Coupled Plasma - Reactive Ion Etching
  • ICP 1: for deep etching of silicon with flourine-donators (Bosch-process)
  • ICP2: for etching of semiconductor materials (e.g. GaAs) with chlorine-donators

TePla 200-G Oxygen Asher

  • Etching of photo resist and organic residues
  • Process gas: Oxygen (O2)

diener electronic NANO Oxygen Asher

  • Etching of photo resist and organic residues
  • Active Cooling, Optical Endpoint Detection
  • Process gas: Oxygen (O2), Argon (Ar)
  • Power: 600 W

Further Equipment

Bal-Tec CPD 030 Critical Point Dryer
  • Process gas: Carbon Dioxide (CO2)

Xerion RTA

R
apid Thermal Annealing
  • Process gas: Argon (Ar)
  • Temperatures up to 400°C


Analytics

Zeiss NVision 40 High End Cross Beam

  • Electron column: high resolution (1,3 nm) field emission
  • Ion column: high resolution (4 nm), suitable for deposition (local microdeposition) and etching
Zygo NewView 5000 White Light Interferometer
  • Vertical Resolution up to 0.1nm
  • Objectives: 5x Michelson, 50x Mirau
  • xy motordesk for stitching
  • Extended vertical scan length up to 20mm


Leica DMR Microskope
  • up to 1000x Magnification
  • Contrast method: bright field, dark field, differential interference contrast
  • Impinging light and transmitted light

SENTECH SENpro Spectroscopic Ellipsometer

Monitoring of film thickness
Wavelength range: 350 nm - 1050 nm

Plasmos SD-2100 Ellipsometer

Monitoring of film thickness

Ambios Technology Oberflächenprofilometer XP-100

  • 3 nm-Auflösegenauigkeit
  • 0,03 - 10 mg Stylus-Aufdruckkraft
  • 1,2 mm max. Messbereich in z-Richtung
  • Analyse von Stufenhöhen, Schichtdicken, Rauheit, Welligkeit, Dünnschichtstress

Sloan Dektak IIA Profilometer

  • 20 nm resolution

Rohde & Schwarz Spectrum Analyzer FSB
  • Band width: 9 kHz-30 GHz
Agilent 86142 B Optical Spectrum Analyzer
  • Band width: 600-1700 nm
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